Voltage controlled resistor using quasi-floating-gate MOSFETs
รหัสดีโอไอ
Creator 1. Susheel Sharma
2. Rockey Gupta
Title Voltage controlled resistor using quasi-floating-gate MOSFETs
Publisher Maejo University
Publication Year 2556
Journal Title Maejo International Journal of Science and Technology
Journal Vol. 7
Journal No. 1
Page no. 16
Keyword voltage controlled resistor,floating- gate MOSFET,quasi-floating-gate MOSFET
ISSN 1905-7873
Abstract A voltage controlled resistor (VCR) using quasi-floating-gate MOSFETs (QFGMOS) suitable for low voltage applications is presented. The performance of the VCR implemented with QFGMOS is compared with its floating-gate MOSFET (FGMOS) version. It was found that QFGMOS offers better performance than FGMOS in terms of frequency response, offsets and chip area. The VCR using QFGMOS offers high bandwidth and low power dissipation and yields high value of resistance as compared to its FGMOS counterpart. The workability of the presented circuits was tested by Spice simulations using level 3 parameters of 0.5?m CMOS technology with supply voltage of ? 0.75V. The simulations results were found to be in accordance with the theoretical predictions.
MaejoInternational Journal of ScienceandTechnology

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