Strain-Induced Band Profile of Stacked InAs/GaAs Quantum Dots
รหัสดีโอไอ
Creator Worasak SUKKABOT
Title Strain-Induced Band Profile of Stacked InAs/GaAs Quantum Dots
Publisher Walailak University
Publication Year 2557
Journal Title Walailak Journal of Science and Technology
Journal Vol. 11
Journal No. 5
Page no. 403-411
Keyword Stacked quantum dots, strain distribution, k.p method
ISSN 1686-3933
Abstract The strain distribution and band profile in triply stacked InAs/GaAs quantum dots with dot spacing of 0.0 - 6.0 nm was calculated. The continuum elasticity theory for strain distribution and 8-band k.p theory for band structure was used. The use of the k.p method to calculate band structure with and without including the effects of strain is reported. The calculated results show the importance of strain effect on the confinement potential of the band structure for triply stacked InAs/GaAs quantum dots.
Walailak University

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