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Oxide Variability Analysis Exploiting Greens Function Simulations |
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| รหัสดีโอไอ | |
| Creator | Ahsin Murtaza Bughio, Junaid Iqbal, Khalil Muhammad Zuhaib, Umair Ali Khan, Nasreen Nizamani |
| Title | Oxide Variability Analysis Exploiting Greens Function Simulations |
| Contributor | - |
| Publisher | TuEngr Group |
| Publication Year | 2564 |
| Journal Title | International Transaction Journal of Engineering, Management, & Applied Sciences & Technologies |
| Journal Vol. | 12 |
| Journal No. | 3 |
| Page no. | 12A3A: 1-7 |
| Keyword | FinFET variability, Solid State Electronics, Greens function, Modeling and simulations, Process variations, Nano-electronic devices, Physics based simulations. |
| URL Website | http://TuEngr.com/Vol12_3.html |
| Website title | ITJEMAST V12(3) 2021 @ TuEngr.com |
| ISSN | 2228-9860 |
| Abstract | Aggressive downscaling of MosFET devices has some limitation due to short channel effects. These short channel effects affect the electronic behavior of device adversely. FinFET was proposed to overcome this shortcoming of MosFETs. But like MosFETs, FinFET have a problem of variability, which becomes more and more effective with the scaling. Variability analysis was the main theme of this research. Oxide thickness variations were taken into account for this research. 5%, 10% and 25% of variations were applied to oxide thickness and results were obtained for drain current, leakage current and threshold voltage. Synopsys Sentaurus as well as in-house simulator (Green's function simulation) were used for variability analysis. |
