(La3+ Mg2+) codoped BiFeO3 nanopowders: Synthesis, characterizations, and giant dielectric relaxations
รหัสดีโอไอ
Creator 1. Pornsawan Kum-onsa
2. Narong Chanlek
3. Masaki Takesada
4. Pornjuk Srepusharawoot
5. Prasit Thongbai
Title (La3+ Mg2+) codoped BiFeO3 nanopowders: Synthesis, characterizations, and giant dielectric relaxations
Publisher Faculty of Engineering, Khon Kaen University
Publication Year 2564
Journal Title Engineering and Applied Science Research
Journal Vol. 48
Journal No. 6
Page no. 766-772
Keyword Dielectric permittivity, Dielectric relaxation, Electron hopping, Interfacial polarization
URL Website https://www.tci-thaijo.org/index.php/easr/index
Website title Engineering and Applied Science Research
ISSN 2539-6161
Abstract A new strategy to improve the dielectric properties of BiFeO3 is proposed by codoping with La3+ and Mg2+ to control the ceramic microstructure and increase the dielectric permittivity (??), respectively. The main phase of BiFeO3 is obtained in nanocrystalline powders of LaxBi1-xFe1-xMgxO3 (x = 0, 0.05 and 0.1), which are prepared by a chemical co-precipitation method. The particle size of the codoped LaxBi1-xFe1-xMgxO3 is smaller than that of the BiFeO3. A dense ceramic microstructure without porosity is obtained by sintering at 800 ?C for 3 h. The mean grain size of the BiFeO3 ceramics decreases with increasing codoping (La3+?Mg2+) concentration. The primary roles of La3+ and Mg2+ are to suppress the grain growth and enhance the densification rate, respectively. At 1 kHz, the ?? of the LaxBi1-xFe1-xMgxO3 with x = 0.1 increased significantly compared to that of the BiFeO3, while the loss tangent (tan?) was lower than that of the BiFeO3. In addition, another role of Mg2+ is to increase the ?? without any effect on the tan?. Two dielectric relaxations are observed in low-frequency (150-250 K) and high-temperature (250-400 K) ranges. An X-ray photoelectron spectroscopy shows that the Fe2+/Fe3+ ration in the codoped LaxBi1-xFe1-xMgxO3 increased compared to that of the BiFeO3, corresponding to the increase in ??. Thus, a low-temperature dielectric relaxation is attributed to the electron hopping between Fe2+?O?Fe3+. On the other hand, a high-temperature dielectric relaxation is caused by interfacial polarization relaxation.
Engineering and Applied Science Research

บรรณานุกรม

EndNote

APA

Chicago

MLA

ดิจิตอลไฟล์

Digital File
DOI Smart-Search
สวัสดีค่ะ ยินดีให้บริการสอบถาม และสืบค้นข้อมูลตัวระบุวัตถุดิจิทัล (ดีโอไอ) สำนักการวิจัยแห่งชาติ (วช.) ค่ะ