|
Electrical Properties of Bistable Device Based on Graphene Oxide Composited with Polyvinylpyrrolidone Thin Films |
|---|---|
| รหัสดีโอไอ | |
| Creator | Korakot Onlaor |
| Title | Electrical Properties of Bistable Device Based on Graphene Oxide Composited with Polyvinylpyrrolidone Thin Films |
| Contributor | Thutiyaporn Thiwawong, Potiyan Songkeaw and Benchapol Tunhoo |
| Publisher | King Mongkut's Institute of Technology Ladkrabang |
| Publication Year | 2564 |
| Journal Title | Current Applied Science and Technology |
| Journal Vol. | 21 |
| Journal No. | 4 |
| Page no. | 662-672 |
| Keyword | graphene oxide, memory device, polymer, composite, nanomaterials |
| URL Website | https://www.tci-thaijo.org/index.php/cast |
| Website title | https://www.tci-thaijo.org/index.php |
| ISSN | 2586-9396 |
| Abstract | This research studied the bistable properties of synthesized graphene oxide (GO) composited with polyvinylpyrrolidone (PVP). The devices were fabricated using a spin coating process on indium tin oxide (ITO)/glass substrate, and the top electrodes were prepared by thermal evaporation with the device structure of ITO/PVP:GO/Al. The PVP:GO films were characterized by Raman spectroscopy, Fourier-transform infrared spectroscopy, X-ray photoemission spectroscopy, and scanning electron microscopy. The current-voltage (I-V) characteristics of the fabricated device exhibited a maximum ON/OFF current ratio in the order of about 104 at a GO concentration of 4 wt%. The mechanism was explained by fitting with the results of the I-V measurement. Moreover, the retention test of the device was more than 2ื104 s. The device showed the important characteristics of memory to be a candidate for data storage. |