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Investigation of deposition parameters on the structural properties and hardness of TiAlN films deposited via reactive pulsed DC magnetron sputteringInvestigation of deposition parameters on structural properties and hardness of TiAlN films deposited by r |
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| รหัสดีโอไอ | |
| Creator | Jariyaporn RUKKUN |
| Title | Investigation of deposition parameters on the structural properties and hardness of TiAlN films deposited via reactive pulsed DC magnetron sputteringInvestigation of deposition parameters on structural properties and hardness of TiAlN films deposited by reactive pulsed DC magnetron sputtering |
| Contributor | Kamon AIEMPANAKIT, Pimchanok REAKAUKOT, Witthawat WONGPISAN, Kirati WAREE, Montri AIEMPANAKIT |
| Publisher | Metallurgy and Materials Science Research Institute Chulalongkorn University |
| Publication Year | 2564 |
| Journal Title | Journal of Metals, Materials and Minerals |
| Journal Vol. | 31 |
| Journal No. | 2 |
| Page no. | 118-122 |
| Keyword | Magnetron sputtering, TiAlN film, Nitrogen gas flow rate, Bias voltage |
| ISSN | 8576149 |
| Abstract | In this work, titanium aluminum nitride (TiAlN) films were deposited on a silicon substrate via reactive pulsed DC magnetron sputtering. The effect of deposition parameters such as nitrogen gasสflow rate, substrate temperature, and bias voltage on the structural and mechanical properties of TiAlNfilms was investigated. The crystal structure, morphology, and hardness of TiAlN films were characterizedสvia X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM, and nanoindentation.สAn improved crystallinity of TiAlN films was obtained by varying the substrate temperature and biasสvoltage. The morphology of the TiAlN film exhibited a columnar structure, and the morphology graduallyสchanged with the increase in bias voltage. The films thickness decreased upon increasing the nitrogenสgas flow rate, substrate temperature, and bias voltage. In addition, the hardness of the TiAlN film wasสenhanced by adjusting the nitrogen gas flow rate, substrate temperature, and bias voltage, and a suitableelemental component ratio was obtained. A maximum hardness of approximately 28.9 GPa was obtainedสfor the TiAlN film with a nitrogen gas flow rate of 4 sccm, substrate temperature of 500ผC, bias voltageสof 100 V, and an elemental composition Al/(Al + Ti) of approximately 34.35%. |
