Designing Outphasing RF Power Amplifier (LINC PA) for IoT Applications in Low Power 5G Wireless Network
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Creator M.F.M. Idros, S.N.N. Mohamad, A.H.A Razak, S.A.M. Al Junid, A.K. Halim, and F.N. Osman
Title Designing Outphasing RF Power Amplifier (LINC PA) for IoT Applications in Low Power 5G Wireless Network
Contributor -
Publisher TuEngr Group
Publication Year 2565
Journal Title International Transaction Journal of Engineering, Management, & Applied Sciences & Technologies
Journal Vol. 13
Journal No. 12
Page no. 13A12G: 1-14
Keyword Outphasing, Power Amplifier, Analog, RF, Low Power, 5G Network
URL Website http://TuEngr.com/Vol13-12.html
Website title ITJEMAST V13(12) 2022 @ TuEngr.com
ISSN 2228-9860
Abstract This article describes the Class E power amplifier (PA) that operates in Silterra's 130nm CMOS. The radio frequency (RF) performance uses low frequencies between 600MHz and 700MHz, the low voltage supplied at 1.3V. A few other sorts of circuit classes, including Class A, B, C, and F for analogue circuits and Class E for switching systems, are obtained from the outphasing RF PA. Classes E and F make up the majority of the classes that were implemented as components of the outphasing circuit. Through this suggestion, it was gradually demonstrated that a portion of a Class E circuit can generate an output that is acceptable for use in a circuit that can increase the semiconductor's performance parameter in the 5G region. This power amplifier (PA) uses a multi-cascode stage and capacitor and inductor as part of the circuit to enhance the frequency network in addition to adding the classified class. In addition, an RF power amplifier combiner has also been developed, which suffers from significant loss when the applied signal's peak-to-average power ratio is larger. The circuits and architectures will be implemented directly in LtSpice in order to evaluate the results and achieve the parameter values of the output power of 164.8 W, power gain of 1.29, power dissipation of 165 W, and efficiency of 82.42 percent.
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