![]() |
A minimum power VCO design using an IMOS varactor for portable RF circuits |
---|---|
รหัสดีโอไอ | |
Creator | 1. Vivek Jangra 2. Manoj Kumar |
Title | A minimum power VCO design using an IMOS varactor for portable RF circuits |
Publisher | Faculty of Engineering, Khon Kaen University |
Publication Year | 2562 |
Journal Title | Engineering and Applied Science Research |
Journal Vol. | 46 |
Journal No. | 4 |
Page no. | 331-339 |
Keyword | Back-gate tuning, Delay cell, IMOS, Low power, Phase noise, Varactor |
URL Website | https://www.tci-thaijo.org/index.php/easr/index |
Website title | Engineering and Applied Science Research |
ISSN | 2539-6161 |
Abstract | This paper presents a wide tuning range voltage-controlled oscillator (VCO) circuit in 180 nm CMOS technology using an inversion mode MOSFET (IMOS) varactor in delay stages. Frequency variation in the VCO has been achieved by changing the capacitance of the output node with the use of an IMOS varactor comprised of two NMOS transistors connected in parallel. The VCO circuit uses a CMOS inverter and output frequency tuning that has been attained by varying the back-gate voltage (V_sb ) and source/drain voltage (V_ct ) of the IMOS varactor. Supply voltage variations from 1 V to 3 V achieves a tuning range from 0.280 GHz to 1.163 GHz along with power dissipation of 0.003 mW to 3.290 mW. Source/drain voltage (V_ct ) variations from 0.1 V to 1.5 V achieve a tuning range of 0.685 GHz to 0.816 GHz along with power dissipation of 0.465 mW. Furthermore, the frequency varies from 0.810 GHz to 0.843 GHz with back-gate voltage (V_sb ) tuning of the IMOS varactor. The results were obtained with different IMOS varactor widths and various combinations of supply voltages to achieve output frequency, power dissipation as well as phase noise. The VCO shows a phase noise of 102.81 dBc/Hz@1MHz and a figure of merit (FoM) is -162.10 dBc/Hz. The proposed VCO circuit attains reasonable performance results that are appropriate for low power radio frequency applications. |