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One-dimensional tight-binding model for electron transportthrough ferromagnet/insulator/ferromagnet junction in B-field |
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| รหัสดีโอไอ | |
| Creator | 1. Natthagrittha Nakhonthong 2. Puangratana Paior |
| Title | One-dimensional tight-binding model for electron transportthrough ferromagnet/insulator/ferromagnet junction in B-field |
| Publisher | Research and Development Office, Prince of Songkla University |
| Publication Year | 2565 |
| Journal Title | Songklanakarin Journal of Science an Technology (SJST) |
| Journal Vol. | 44 |
| Journal No. | 2 |
| Page no. | 401-407 |
| Keyword | tight-binding model, tunneling magnetoresistance, ferromagnet/insulator interface |
| URL Website | https://rdo.psu.ac.th/sjst/index.php |
| ISSN | 0125-3395 |
| Abstract | We applied a one-dimensional tight-binding model to the study electron transport in a ferromagnetic metal-insulatorferromagnetic metal junction. We included a small external magnetic field perpendicular to the one-dimensional chain as a ZeemanEffect on electron spins. We obtained the transmission and reflection probabilities of an electron across the junction and used themto calculate its tunneling magnetoresistance. We found that the magnetoresistance ratio increases with the insulating gap of theinsulator. The variation of the insulator thickness gives an oscillating behavior of the ratio. Our theoretical model predicts the righttrend of the magnetoresistance on the thickness, and also indicates that at a certain thickness the maximum magnetoresistance ratiooccurs. |
