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Preparation of aluminum doped zinc oxide targetsand RF magnetron sputter thin filmswith various aluminum doping concentrations |
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| รหัสดีโอไอ | |
| Creator | 1. Narongchai Boonyopakorn 2. Ratthapol Rangkupan 3. Tanakorn Osotchan |
| Title | Preparation of aluminum doped zinc oxide targetsand RF magnetron sputter thin filmswith various aluminum doping concentrations |
| Publisher | Research and Development Office, Prince of Songkla University |
| Publication Year | 2561 |
| Journal Title | Songklanakarin Journal of Science and Technology |
| Journal Vol. | 40 |
| Journal No. | 4 |
| Page no. | 824 |
| Keyword | AZO films, Al-doping concentration, RF magnetron sputtering |
| URL Website | http://rdo.psu.ac.th/sjstweb/index.php |
| ISSN | 0125-3395 |
| Abstract | In this work, aluminum doped zinc oxide (AZO) ceramic targets were prepared from ZnO powder and Al2O3 powderwith varying amounts of Al2O3 doped in a range of 1-5 wt%. The mixed ZnO and Al2O3 powders were pressed at a pressure of 80MPa into disks and sintered at 1,300 ?C for 5 h in air. The crystal structures of the sintered targets were characterized by X-raydiffraction (XRD) technique. It was found that the XRD spectra showed a hexagonal (wurtzite) structure of ZnO for all Al2O3doped films. However, as the amount of Al2O3increased over 2 wt%, the gahnite (ZnAl2O4) phase could be observed in the XRDspectra. The AZO films were deposited on glass slides at room temperature and post-annealed at 500 ?C in a vacuum for 1 h. Thefilm structures, Al/Zn ratio between the Al and Zn atoms, and the electrical properties were characterized. It was found that anincrease of Al2O3 content in the target gave a higher Al doping concentration in the film which resulted in more Al substitutionsin the Zn sites which in turn resulted in an increase of carrier concentration. The crystal structure of the AZO films depositedfrom undoped and 1 wt% Al2O3-doped targets showed the (002) preferred orientation and drastically decreased at higher Aldoping concentrations. The mobility of the charge carrier was affected by lower crystallinity due to grain boundary scattering. Inaddition, the excess Al in the film may play a role as impurity scattering centers. A decrease of Hall mobility resulted inincreased resistivity. The minimum resistivity of 2.01x10-3 ?.cm could be achieved for the AZO films deposited from 1 wt%Al2O3-doped ZnO targets. |
